Power Field-Effect Transistors Discontinued

IRLML6401

Manufacturer: IR

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRLML6401
Generic: IRLML6401
CAGE Code: 59993, 52467, 81483
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1999
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • REACH Compliant
Type Part Number Manufacturer
FFF Alternates CDM6401 CDIL
Functional Equivalent CDM6401 CDIL
FFF Alternates CDM6401-AQ CDIL
Functional Equivalent CDM6401-AQ CDIL
FFF Alternates CDM6401-AQT&R CDIL
Functional Equivalent CDM6401-AQT&R CDIL
FFF Alternates CDM6401T&R CDIL
Functional Equivalent CDM6401T&R CDIL
FFF Alternates SI2333DDS-T1-BE3 Vishay
Functional Equivalent SI2333DDS-T1-BE3 Vishay
FFF Alternates SI2333DDS-T1-GE3 Vishay
Functional Equivalent SI2333DDS-T1-GE3 Vishay
FFF Alternates SP001577044 Infineon
Functional Equivalent SP001577044 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip