Power Field-Effect Transistors Discontinued

SPD30N06S2L-23

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS POWER-TRANSISTOR
Part Number: SPD30N06S2L-23
Generic: SPD30N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 2000
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
Type Part Number Manufacturer
FFF Alternates IPD30N06S2L-23 Infineon
Functional Equivalent IPD30N06S2L-23 Infineon
Manufacturer Suggested IPD30N06S2L-23 Infineon
FFF Alternates IPD30N06S2L23ATMA1 Infineon
Functional Equivalent IPD30N06S2L23ATMA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip