Power Field-Effect Transistors Discontinued

SPD08P06P

Manufacturer: Infineon

Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer Description: SIP MOS POWER-TRANSISTOR
Part Number: SPD08P06P
Generic: SPD08P06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1998
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
Type Part Number Manufacturer
Manufacturer Suggested NTD2955 Onsemi
FFF Alternates SPD08P06PG Infineon
Functional Equivalent SPD08P06PG Infineon
Manufacturer Suggested SPD08P06PG Infineon
Functional Equivalent STD10P6F6 ST Micro
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details