Power Field-Effect Transistors Discontinued

SPB80P06P

Manufacturer: Infineon

Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: SIPMOS POWER-TRANSISTOR
Part Number: SPB80P06P
Generic: SPB80P06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 1999
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates SPB80P06PG Infineon
Functional Equivalent SPB80P06PG Infineon
Manufacturer Suggested SPB80P06PG Infineon
FFF Alternates SPB80P06PGATMA1 Infineon
Functional Equivalent SPB80P06PGATMA1 Infineon
Functional Equivalent SUM55P06-19L-E3 Vishay
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details