Power Field-Effect Transistors EOL Phase-Out

SPA15N60C3

Manufacturer: Infineon

Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: COOL MOS POWER TRANSISTOR
Part Number: SPA15N60C3
Generic: SPA15N60
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 2003
Lifecycle Stage: Phase-Out

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies SPA15N60C3, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 429 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
Manufacturer Suggested FCPF260N60E Onsemi
Manufacturer Suggested IPA60R280P7 Infineon
Functional Equivalent R6015ENX Rohm
Functional Equivalent SIHA15N60E-E3 Vishay
Functional Equivalent SIHF15N60E-E3 Vishay
Functional Equivalent SIHF15N60E-GE3 Vishay
Functional Equivalent TK14A65W5 Toshiba
Pricing & Availability
429 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Low
  • Supply Chain: High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic