Power Field-Effect Transistors Active Mature

JANTX2N6800

Manufacturer: Infineon

Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Manufacturer Description: REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR
Part Number: JANTX2N6800
Generic: 2N6800
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: DLA
DLA Qualification: Qualified
Date of Introduction: August 2012
Lifecycle Stage: Mature

Package Information
Package Style: CYLINDRICAL
Terminals: 3

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates 2N6800 TT Electronics
FFF Alternates 2N6800 Infineon
Functional Equivalent 2N6800 TT Electronics
Functional Equivalent 2N6800 Infineon
FFF Alternates 2N6800R1 TT Electronics
Functional Equivalent 2N6800R1 TT Electronics
Active Manufacturers DLA 1X7M5
FFF Alternates IRFF330 NJ Semi
FFF Alternates IRFF330 Infineon
Functional Equivalent IRFF330 NJ Semi
Functional Equivalent IRFF330 Infineon
FFF Alternates IRFF330-JQR-B TT Electronics
Functional Equivalent IRFF330-JQR-B TT Electronics
FFF Alternates IRFF330-JQR-BR1 TT Electronics
Functional Equivalent IRFF330-JQR-BR1 TT Electronics
FFF Alternates IRFF330R1 TT Electronics
Functional Equivalent IRFF330R1 TT Electronics
Functional Equivalent JAN2N6800 DLA
Functional Equivalent JANTX2N6800 DLA
FFF Alternates JANTXV2N6800 Infineon
Functional Equivalent JANTXV2N6800 DLA
Functional Equivalent JANTXV2N6800 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip