Power Field-Effect Transistors Active Mature

JANTX2N6768

Manufacturer: Infineon

Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

Manufacturer Description: REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR
Part Number: JANTX2N6768
Generic: 2N6768
CAGE Code: C6489, 4KYR2
NSN: 5961-01-180-4072
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: DLA
DLA Qualification: Qualified
Date of Introduction: March 2013
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 2

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates 2N6768 Infineon
Functional Equivalent 2N6768 Infineon
FFF Alternates 2N6768R1 TT Electronics
Functional Equivalent 2N6768R1 TT Electronics
Active Manufacturers DLA 1X7M5
FFF Alternates IRF350 Infineon
Functional Equivalent IRF350 Infineon
Functional Equivalent JAN2N6768 DLA
FFF Alternates JANHCA2N6768 Infineon
Functional Equivalent JANHCA2N6768 DLA
Functional Equivalent JANHCA2N6768 Infineon
Functional Equivalent JANTX2N6768 DLA
FFF Alternates JANTXV2N6768 Infineon
Functional Equivalent JANTXV2N6768 DLA
Functional Equivalent JANTXV2N6768 Infineon
Pricing & Availability
226 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic