Power Field-Effect Transistors Active Mature

JANSR2N7479U3

Manufacturer: Infineon

Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: RADIATION HARDENED SURFACE MOUNT POWER MOSFET
Part Number: JANSR2N7479U3
Generic: SR2N7479U3
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: DLA, Rad Hard, Space
DLA Qualification: Qualified
Date of Introduction: April 2006
Lifecycle Stage: Mature

Package Information
Package Style: CHIP CARRIER
Terminals: 3

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Active Manufacturers DLA 1X7M5
Functional Equivalent JANSR2N7479U3 DLA
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip