Power Field-Effect Transistors EOL Phase-Out

IRLMS2002TRPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRLMS2002TRPBF
Generic: IRLMS2002
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2000
Lifecycle Stage: Phase-Out
Package Information
Package Style: SMALL OUTLINE
Terminals: 6
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested BSL202SNH6327 Infineon
Manufacturer Suggested BSL202SNH6327XTSA1 Infineon
Manufacturer Suggested CSD17318Q2 TI
Manufacturer Suggested FDC637BNZ Onsemi
Functional Equivalent PJS6416_S1_00001 Panjit
Functional Equivalent RQ1C065UNTR Rohm
Pricing & Availability
120375 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Low
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details