Power Field-Effect Transistors Discontinued

IRLL024NPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRLL024NPBF
Generic: IRLL024
CAGE Code: C6489, 4KYR2
NSN: 5961-01-687-7436
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: UL
Date of Introduction: April 2004
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent DMN6068SE-13 Diodes
Functional Equivalent DMN6068SEQ-13 Diodes
FFF Alternates IRLL024NTRPBF Infineon
Functional Equivalent IRLL024NTRPBF Infineon
Manufacturer Suggested IRLL024NTRPBF Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip