Power Field-Effect Transistors
Active
Mature
IRHNJ57130
Manufacturer: Infineon
Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
| Part Number: | IRHNJ57130 |
|---|---|
| Generic: | IRHNJ57130 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | Rad Hard |
|---|---|
| DLA Qualification: | Not Qualified |
| Date of Introduction: | March 2000 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | CHIP CARRIER |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
IRHNJ57130PBF
|
Infineon |
| Functional Equivalent |
IRHNJ57130PBF
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: High
- Supply Chain: Med