Power Field-Effect Transistors Active Mature

IRHNA57064

Manufacturer: Infineon

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SURFACE MOUNT RADIATION HARDENED POWER MOSFET
Part Number: IRHNA57064
Generic: IRHNA57064
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: Rad Hard
DLA Qualification: Not Qualified
Date of Introduction: January 1999
Lifecycle Stage: Mature

Package Information
Package Style: CHIP CARRIER
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IPB80N06S205XT Infineon
Functional Equivalent IPB80N06S2H5ATMA2 Infineon
Functional Equivalent IPB80N06S2H5AUMA1 Infineon
Functional Equivalent IPB80N06S3L06ATMA1 Infineon
Functional Equivalent IRF2805 Infineon
Functional Equivalent IRHNA54064 Infineon
Functional Equivalent IRHNA54064PBF Infineon
FFF Alternates IRHNA57064PBF Infineon
Functional Equivalent IRHNA57064PBF Infineon
Functional Equivalent IRHNA58064PBF Infineon
Functional Equivalent IRHSNA58064PBF Infineon
Functional Equivalent SP001571200 Infineon
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

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