Power Field-Effect Transistors Active Mature

IRHG6110

Manufacturer: Infineon

Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

Manufacturer Description: 2N-2P-CHANNEL THRU-HOLE (MO-036AB) RADIATION HARDENED POWER MOSFET
Part Number: IRHG6110
Generic: IRHG6110
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 1993
Lifecycle Stage: Mature
Package Information
Package Style: IN-LINE
Terminals: 14
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details