Insulated Gate Bipolar Transistors Discontinued

IRGP35B60PDPBF

Manufacturer: Infineon

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Manufacturer Description: WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Part Number: IRGP35B60PDPBF
Generic: IRGP35B60
CAGE Code: C6489, 4KYR2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2004
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested IKW30N65ES5 Infineon
Manufacturer Suggested IKW30N65ES5XKSA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: High
  • Environmental: Low

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec