Power Field-Effect Transistors Active Mature

IRFY9130CMSCX

Manufacturer: Infineon

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

Manufacturer Description: 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET POWER MOSFET
Part Number: IRFY9130CMSCX
Generic: IRFY9130
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2010
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IRF9130SMD05DGS TT Electronics
Functional Equivalent IRF9130SMD05DGS-JQR-B TT Electronics
Functional Equivalent IRF9130SMD05DSG-JQR-B TT Electronics
Functional Equivalent IRF9530SMD-QR-EBC TT Electronics
Functional Equivalent IRFNJ9130-JQR-B TT Electronics
Functional Equivalent IRFY9130CMPBF Infineon
Functional Equivalent IRFY9130CMSCV Infineon
Functional Equivalent IRHM9130PBF Infineon
Functional Equivalent IRHM93130PBF Infineon
Functional Equivalent IRHY9130CMPBF Infineon
Functional Equivalent IRHY93130CMPBF Infineon
Functional Equivalent SFX9130JUB SS Devices
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details