Power Field-Effect Transistors NRFND Decline

IRFR2905ZTRPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRFR2905ZTRPBF
Generic: IRFR2905
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 2003
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent 934070049115 Nexperia
Functional Equivalent BUK7M15-60EX Nexperia
Functional Equivalent SQD40N06-14L Vishay
Functional Equivalent SQD40N06-14L_GE3 Vishay
Functional Equivalent SSF6014J7 Good Ark
Functional Equivalent TK30E06N1 Toshiba
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip