Power Field-Effect Transistors
Active
Mature
IRFG5110
Manufacturer: Infineon
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
Manufacturer Description:
100V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) POWER MOSFET
| Part Number: | IRFG5110 |
|---|---|
| Generic: | IRFG5110 |
| CAGE Code: | C6489, 4KYR2 |
| NSN: | 5961-01-346-1323 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | January 1990 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | IN-LINE |
|---|---|
| Terminals: | 14 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: High
- Supply Chain: Med
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