Power Field-Effect Transistors
Discontinued
IRFB59N10DPBF
Manufacturer: Infineon
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Description:
HEXFET Power MOSFET
| Part Number: | IRFB59N10DPBF |
|---|---|
| Generic: | IRFB59N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | April 2000 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
IRFB4510PBF
|
Infineon |
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: High
- Environmental: Med
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