Power Field-Effect Transistors Active Mature

IRFB3006PBF

Manufacturer: Infineon

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRFB3006PBF
Generic: IRFB3006
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2008
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FDB0170N607L Onsemi
Manufacturer Suggested IRFB3006PBFXKMA1 Infineon
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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