Power Field-Effect Transistors Discontinued

IRF7341PBF

Manufacturer: Infineon

Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF7341PBF
Generic: IRF7341
CAGE Code: C6489, 4KYR2
NSN: 5961-01-622-7091
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 2004
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FDMC89521L Onsemi
FFF Alternates IRF7341 Infineon
Functional Equivalent IRF7341 Infineon
FFF Alternates IRF7341GTRPBF Infineon
Functional Equivalent IRF7341GTRPBF Infineon
FFF Alternates IRF7341TRPBF Infineon
Functional Equivalent IRF7341TRPBF Infineon
Manufacturer Suggested IRF7341TRPBF Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip