Power Field-Effect Transistors Discontinued

IRF7201

Manufacturer: Infineon

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF7201
Generic: IRF7201
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: December 1998
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent CHM3252JGP Chenmko
Manufacturer Suggested NTMS7N03R2 Onsemi
Functional Equivalent UT6402G-AE3-R Unisonic
Functional Equivalent UT6402G-AG6-R Unisonic
Functional Equivalent UT6402L-AE3-R Unisonic
Functional Equivalent UT6402L-AG6-R Unisonic
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details