Power Field-Effect Transistors Active Mature

IRF640NS

Manufacturer: Infineon

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF640NS
Generic: IRF640
CAGE Code: C6489, 4KYR2
NSN: 5961-01-661-0701
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2000
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BUZ31 NJ Semi
Functional Equivalent FQB19N20TM Onsemi
Functional Equivalent FS20VS-5 Renesas
FFF Alternates IRF640NSTRLPBF Infineon
Functional Equivalent IRF640NSTRLPBF Infineon
Functional Equivalent IRF640SPBF Vishay
Functional Equivalent IRF640STRLPBF Vishay
Functional Equivalent IRF640STRRPBF Vishay
Functional Equivalent SIHF640S Vishay
Functional Equivalent SIHF640S-E3 Vishay
Functional Equivalent SIHF640S-GE3 Vishay
Functional Equivalent SIHF640STL Vishay
Functional Equivalent SIHF640STL-E3 Vishay
Functional Equivalent SIHF640STR Vishay
Functional Equivalent SIHF640STR-E3 Vishay
Functional Equivalent SIHF640STRL-GE3 Vishay
Functional Equivalent SIHF640STRR-GE3 Vishay
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

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