Power Field-Effect Transistors
Active
Mature
IRF640NPBF
Manufacturer: Infineon
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Description:
HEXFET POWER MOSFET
| Part Number: | IRF640NPBF |
|---|---|
| Generic: | IRF640 |
| CAGE Code: | C6489, 4KYR2 |
| NSN: | 5961-01-662-7633 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | UL |
|---|---|
| DLA Qualification: | Not Qualified |
| Date of Introduction: | March 2004 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FDP18N20F
|
Onsemi |
| FFF Alternates |
IRF640N
|
Infineon |
| Functional Equivalent |
IRF640N
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Low
- Supply Chain: Med