Power Field-Effect Transistors Discontinued

IRF630NSPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF630NSPBF
Generic: IRF630
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2000
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested IRF630NSTRLPBF Infineon
Functional Equivalent IRF630S NJ Semi
Functional Equivalent IRF630SPBF Vishay
Functional Equivalent IRF630STRLPBF Vishay
Functional Equivalent IRF630STRRPBF Vishay
Manufacturer Suggested IRF7413ZTRPBF Infineon
Functional Equivalent SIHF630S Vishay
Functional Equivalent SIHF630S-E3 Vishay
Functional Equivalent SIHF630S-GE3 Vishay
Functional Equivalent SIHF630STL Vishay
Functional Equivalent SIHF630STL-E3 Vishay
Functional Equivalent SIHF630STR Vishay
Functional Equivalent SIHF630STR-E3 Vishay
Functional Equivalent SIHF630STRL-GE3 Vishay
Functional Equivalent SIHF630STRR-GE3 Vishay
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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