Power Field-Effect Transistors Active Mature

IRF5802

Manufacturer: Infineon

Power Field-Effect Transistor, 0.9A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SMPS HEXFET POWER MOSFET
Part Number: IRF5802
Generic: IRF5802
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 2001
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 6

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IRF5802PBF Infineon
Functional Equivalent IRF5802PBF Infineon
FFF Alternates IRF5802TRPBF Infineon
Functional Equivalent IRF5802TRPBF Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip