Power Field-Effect Transistors Active Mature

IRF520NPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF520NPBF
Generic: IRF520
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1998
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IRF520N Infineon
Functional Equivalent IRF520N Infineon
FFF Alternates RFP12N10 NJ Semi
Functional Equivalent RFP12N10 NJ Semi
Manufacturer Suggested RFP12N10L Onsemi
Pricing & Availability
297295 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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