Power Field-Effect Transistors Active Mature

IRF330

Manufacturer: Infineon

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Manufacturer Description: REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR
Part Number: IRF330
Generic: IRF330
CAGE Code: C6489, 4KYR2
NSN: 5961-01-176-6655
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1990
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IRF330 NJ Semi
Functional Equivalent IRF330 NJ Semi
FFF Alternates IRF330PBF Infineon
Functional Equivalent IRF330PBF Infineon
FFF Alternates IRF330R1 TT Electronics
Functional Equivalent IRF330R1 TT Electronics
Active Manufacturers NJ Semi 2D085
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details