Power Field-Effect Transistors Active Mature

IRF3205PBF

Manufacturer: Infineon

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF3205PBF
Generic: IRF3205
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: UL
DLA Qualification: Not Qualified
Date of Introduction: October 2003
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent HUF75339P3 Onsemi
FFF Alternates HUF75344P3 Onsemi
Functional Equivalent HUF75344P3 Onsemi
Functional Equivalent HUF75345P3 Onsemi
FFF Alternates IRF3205 Infineon
Functional Equivalent IRF3205 Infineon
Functional Equivalent IRF3205ZPBF Infineon
Manufacturer Suggested NTP5860N Onsemi
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med-High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip