Power Field-Effect Transistors
NRFND
Decline
IRF2807
Manufacturer: Infineon
Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Description:
HEXFET POWER MOSFET
| Part Number: | IRF2807 |
|---|---|
| Generic: | IRF2807 |
| CAGE Code: | C6489, 4KYR2 |
| NSN: | 5961-01-607-5423 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | January 1998 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FDP16AN08A0
|
Onsemi |
| Functional Equivalent |
IRF540N
|
Infineon |
| Functional Equivalent |
IRF540NPBF
|
Infineon |
| Functional Equivalent |
RFP2N08
|
NJ Semi |
| Functional Equivalent |
RFP2N10
|
NJ Semi |
| Functional Equivalent |
SUP85N10-10-E3
|
Vishay |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: High
- Supply Chain: Med-High