Power Field-Effect Transistors Active Mature

IRF250

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

Manufacturer Description: REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR
Part Number: IRF250
Generic: IRF250
CAGE Code: C6489, 4KYR2
NSN: 5961-01-273-0764
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1990
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent 2N6765 TT Electronics
Functional Equivalent 2N6765R1 TT Electronics
Functional Equivalent 2N6766 Infineon
Functional Equivalent 2N6766E3 Microchip
Functional Equivalent 2N6766-JQR TT Electronics
Functional Equivalent 2N6766-JQR-A TT Electronics
Functional Equivalent 2N6766-JQR-AR1 TT Electronics
Functional Equivalent 2N6766-JQR-BR1 TT Electronics
Functional Equivalent 2N6766-JQRR1 TT Electronics
Functional Equivalent 2N6766R1 TT Electronics
Functional Equivalent BUZ36 NJ Semi
FFF Alternates IRF250PBF Infineon
Functional Equivalent IRF250PBF Infineon
Functional Equivalent IRF251 NJ Semi
Functional Equivalent IRF253 NJ Semi
Functional Equivalent JANHCA2N6766 Infineon
Functional Equivalent JANTX2N6766 Infineon
Functional Equivalent JANTXV2N6766 Infineon
Active Manufacturers NJ Semi 2D085
Pricing & Availability
25 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic