Power Field-Effect Transistors Active Mature

IPW65R110CFD

Manufacturer: Infineon

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Manufacturer Description: 650 V COOLMOS POWER TRANSISTOR
Part Number: IPW65R110CFD
Generic: IPW65R110
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2011
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IPW65R110CFDA Infineon
Functional Equivalent IPW65R110CFDA Infineon
FFF Alternates IPW65R110CFDAFKSA1 Infineon
Functional Equivalent IPW65R110CFDAFKSA1 Infineon
FFF Alternates IPW65R110CFDFKSA2 Infineon
Functional Equivalent IPW65R110CFDFKSA2 Infineon
Functional Equivalent NTHL110N65S3F Onsemi
Functional Equivalent TK28E65W Toshiba
Functional Equivalent TK28N65W Toshiba
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med-High

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