Power Field-Effect Transistors Active Mature

IPT60R102G7XTMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 23A I(D), 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: MOSFET
Part Number: IPT60R102G7XTMA1
Generic: IPT60R102
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: December 2016
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IPB60R099C7ATMA1 Infineon
Functional Equivalent IPL65R099C7AUMA1 Infineon
Functional Equivalent IPP60R099C7 Infineon
Functional Equivalent IPP60R099C7XKSA1 Infineon
Functional Equivalent IPP65R095C7 Infineon
Functional Equivalent IPP65R095C7XKSA1 Infineon
Functional Equivalent IPW60R099C7 Infineon
Functional Equivalent IPW60R099C7XKSA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip