Power Field-Effect Transistors NRFND Decline

IPP60R190C6XKSA1

Manufacturer: Infineon

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: 600 V COOLMOS C6 POWER MOSFET
Part Number: IPP60R190C6XKSA1
Generic: IPP60R190
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2009
Lifecycle Stage: Decline

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IPP60R190C6XKSA1, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 1821 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

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Pricing & Availability
1821 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low-Med

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