Power Field-Effect Transistors
NRFND
Decline
IPP030N10N3G
Manufacturer: Infineon
Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Description:
OPTIMOS3 POWER-TRANSISTOR
| Part Number: | IPP030N10N3G |
|---|---|
| Generic: | IPP030N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | October 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC035N10NS5
|
Infineon |
| Functional Equivalent |
BSC035N10NS5ATMA1
|
Infineon |
| Manufacturer Suggested |
FDP036N10A
|
Onsemi |
| Functional Equivalent |
TK100E10N1
|
Toshiba |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Low
- Supply Chain: Med-High