Power Field-Effect Transistors Active Mature

IPN60R600PFD7SATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 6A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-261

Manufacturer Description: MOSFET
Part Number: IPN60R600PFD7SATMA1
Generic: IPN60R600
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2019
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -40.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IPN60R600PFD7SATMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 11404 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.

Pricing & Availability
11404 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: High

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