Power Field-Effect Transistors Active Mature

IPG20N10S4L35ATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 20A I(D), 100V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS-T2 POWER-TRANSISTOR
Part Number: IPG20N10S4L35ATMA1
Generic: IPG20N10S4
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: May 2012
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IPG20N10S4L-35 Infineon
Pricing & Availability
235299 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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