Power Field-Effect Transistors
Active
Mature
IPG20N10S4L35ATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 20A I(D), 100V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS-T2 POWER-TRANSISTOR
| Part Number: | IPG20N10S4L35ATMA1 |
|---|---|
| Generic: | IPG20N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | May 2012 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
IPG20N10S4L-35
|
Infineon |
Pricing & Availability
211610 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low
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