Power Field-Effect Transistors
NRFND
Decline
IPD90N06S4-07
Manufacturer: Infineon
Power Field-Effect Transistor, 90A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Manufacturer Description:
OPTIMOS-T2 POWER-TRANSISTOR
| Part Number: | IPD90N06S4-07 |
|---|---|
| Generic: | IPD90N06S4 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | March 2009 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FDD86569-F085
|
Onsemi |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Med-High