Power Field-Effect Transistors Discontinued

IPD60R600C6BTMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: 600 V COOLMOS C6 POWER TRANSISTOR
Part Number: IPD60R600C6BTMA1
Generic: IPD60R600
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 2009
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FCD600N60Z Onsemi
Manufacturer Suggested FCD850N80Z Onsemi
Manufacturer Suggested IPD60R600C6ATMA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip