Power Field-Effect Transistors Active Decline

IPD50P04P4L-11

Manufacturer: Infineon

Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS-P2 POWER-TRANSISTOR
Part Number: IPD50P04P4L-11
Generic: IPD50P04
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2010
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent AOD4185 Alpha Omega
Functional Equivalent AOI4185 Alpha Omega
Manufacturer Suggested FDD9509L-F085 Onsemi
FFF Alternates IPD50P04P4L11ATMA2 Infineon
Functional Equivalent IPD50P04P4L11ATMA2 Infineon
Functional Equivalent NP50P04SLG-E1-AY Renesas
Functional Equivalent NVTFS014P04M8LTAG Onsemi
Functional Equivalent NVTFWS014P04M8LTAG Onsemi
Functional Equivalent SUD50P04-08-GE3 Vishay
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details