Power Field-Effect Transistors Active Decline

IPD50N06S4-09

Manufacturer: Infineon

Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS-T2 POWER-TRANSISTOR
Part Number: IPD50N06S4-09
Generic: IPD50N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 2009
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FDD86580-F085 Onsemi
Functional Equivalent IPB081N06L3GATMA1 Infineon
Functional Equivalent IPB081N06L3GXT Infineon
Functional Equivalent IPB090N06N3G Infineon
Functional Equivalent IPB090N06N3GATMA1 Infineon
Functional Equivalent IPB090N06N3GXT Infineon
Functional Equivalent IPD50N06S309ATMA1 Infineon
Functional Equivalent IPD50N06S409ATMA2 Infineon
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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