Power Field-Effect Transistors Active Mature

IPD50N03S4L-06

Manufacturer: Infineon

Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS T-2 POWER-TRANSISTOR
Part Number: IPD50N03S4L-06
Generic: IPD50N03
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 2008
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested ATP204 Onsemi
Manufacturer Suggested ATP208 Onsemi
Functional Equivalent IPD50N03S4L06ATMA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip