Power Field-Effect Transistors
NRFND
Decline
IPD35N10S3L26ATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Manufacturer Description:
OPTIMOS-T POWER-TRANSISTOR
| Part Number: | IPD35N10S3L26ATMA1 |
|---|---|
| Generic: | IPD35N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | May 2011 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
FDD3670
|
Onsemi |
| Functional Equivalent |
IPB35N10S3L-26
|
Infineon |
| Functional Equivalent |
IPB35N10S3L26ATMA2
|
Infineon |
| Functional Equivalent |
IPD25CN10NGXT
|
Infineon |
| FFF Alternates |
IPD35N10S3L-26
|
Infineon |
| Functional Equivalent |
IPD35N10S3L-26
|
Infineon |
| FFF Alternates |
IPD35N10S3L26ATMA2
|
Infineon |
| Functional Equivalent |
IPD35N10S3L26ATMA2
|
Infineon |
| Manufacturer Suggested |
IPD35N10S3L26ATMA2
|
Infineon |
| FFF Alternates |
IPD35N10S3L26XT
|
Infineon |
| Functional Equivalent |
IPD35N10S3L26XT
|
Infineon |
| Functional Equivalent |
IRF540Z
|
Infineon |
| Functional Equivalent |
IRF5M3710SCV
|
Infineon |
| Functional Equivalent |
IRF5M3710SCX
|
Infineon |
| Functional Equivalent |
SHDC225456
|
Sensitron |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low