IPD122N10N3GATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 59A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
| Part Number: | IPD122N10N3GATMA1 |
|---|---|
| Generic: | IPD122N10 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | May 2014 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
Abacus Technologies supplies IPD122N10N3GATMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 10164 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD19533Q5A
|
TI |
| Functional Equivalent |
IPD122N10N3GXT
|
Infineon |
| Functional Equivalent |
IPD60N10S4-12
|
Infineon |
| Functional Equivalent |
IPD60N10S412ATMA1
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med
Need help? Email sales or call (800) 701-8152.
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