Power Field-Effect Transistors Discontinued

IPD048N06L3GBTMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPD048N06L3GBTMA1
Generic: IPD048N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2008
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent 934064465115 Nexperia
Functional Equivalent 934067436115 Nexperia
Functional Equivalent 934069893115 Nexperia
Functional Equivalent IPB100N06S304ATMA1 Infineon
FFF Alternates IPD048N06L3G Infineon
Functional Equivalent IPD048N06L3G Infineon
Functional Equivalent IPD90N06S4L05ATMA2 Infineon
Functional Equivalent NP89N055PUK-E1-AY Renesas
Functional Equivalent PSMN4R0-60YS 115
Functional Equivalent PSMN4R1-60YLX Nexperia
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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