Power Field-Effect Transistors NRFND Decline

IPD036N04LG

Manufacturer: Infineon

Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPD036N04LG
Generic: IPD036N04
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2007
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates DMTH4005SK3-13 Diodes
Functional Equivalent DMTH4005SK3-13 Diodes
FFF Alternates DMTH4005SK3Q-13 Diodes
Functional Equivalent DMTH4005SK3Q-13 Diodes
FFF Alternates IPD036N04LGXT Infineon
Functional Equivalent IPD036N04LGXT Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip