Power Field-Effect Transistors Active Mature

IPB80N06S209ATMA2

Manufacturer: Infineon

Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS POWER-TRANSISTOR
Part Number: IPB80N06S209ATMA2
Generic: IPB80N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2006
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IPB80N06S2-09 Infineon
Functional Equivalent IPB80N06S2-09 Infineon
FFF Alternates IPB80N06S209ATMA1 Infineon
Functional Equivalent IPB80N06S209ATMA1 Infineon
FFF Alternates IPB80N06S209XT Infineon
Functional Equivalent IPB80N06S209XT Infineon
Functional Equivalent IPB80N06S2L-06 Infineon
Functional Equivalent IPB80N06S2L06ATMA1 Infineon
Functional Equivalent IPB80N06S2L06ATMA2 Infineon
Functional Equivalent IPB80N06S2L06XT Infineon
Functional Equivalent IPP80N06S209AKSA1 Infineon
Functional Equivalent IPP80N06S209XK Infineon
Functional Equivalent SP0000-82518 Infineon
Functional Equivalent SP0000-84809 Infineon
Functional Equivalent STB140NF55T4 ST Micro
Functional Equivalent STB85NF55 ST Micro
Functional Equivalent STB85NF55L ST Micro
Functional Equivalent STB85NF55LT4 ST Micro
Functional Equivalent STB85NF55T4 ST Micro
Pricing & Availability
977 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details