Power Field-Effect Transistors Discontinued

IPB65R190C7ATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB

Manufacturer Description: 650 V COOLMOS C7 POWER TRANSISTOR
Part Number: IPB65R190C7ATMA1
Generic: IPB65R190
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2011
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FCB290N80 Onsemi
FFF Alternates IPB65R190C7 Infineon
Functional Equivalent IPB65R190C7 Infineon
Manufacturer Suggested IPB65R190C7ATMA2 Infineon
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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