Power Field-Effect Transistors Discontinued

IPB65R045C7ATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: 650 V COOLMOS C7 POWER TRANSISTOR
Part Number: IPB65R045C7ATMA1
Generic: IPB65R045
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: April 2013
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FCB070N65S3 Onsemi
FFF Alternates IPB65R045C7 Infineon
Functional Equivalent IPB65R045C7 Infineon
FFF Alternates IPB65R045C7ATMA2 Infineon
Functional Equivalent IPB65R045C7ATMA2 Infineon
Manufacturer Suggested IPB65R045C7ATMA2 Infineon
Functional Equivalent IPP65R045C7 Infineon
Functional Equivalent IPP65R045C7XKSA1 Infineon
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip