Power Field-Effect Transistors Discontinued

IPB60R280C6

Manufacturer: Infineon

Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: 600 V COOLMOS C6 POWER MOSFET
Part Number: IPB60R280C6
Generic: IPB60R280
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2009
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested IPB60R280P7 Infineon
Functional Equivalent IXKH13N60C5 Littelfuse
Functional Equivalent IXKP13N60C5 Littelfuse
Functional Equivalent SIHD14N60E-GE3 Vishay
Functional Equivalent SIHH14N65EF-T1-GE3 Vishay
Functional Equivalent STB18N60M2 ST Micro
Functional Equivalent STP18N60M2 ST Micro
Functional Equivalent STW18N60M2 ST Micro
Functional Equivalent TK14E65W5 Toshiba
Functional Equivalent TK14G65W5 Toshiba
Functional Equivalent TK14N65W5 Toshiba
Functional Equivalent TK14V65W Toshiba
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details