IPB60R125C6ATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Part Number: | IPB60R125C6ATMA1 |
|---|---|
| Generic: | IPB60R125 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | September 2009 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
Abacus Technologies supplies IPB60R125C6ATMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 4303 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
APT30N60BC6
|
Microchip |
| Manufacturer Suggested |
FCB110N65F
|
Onsemi |
| Functional Equivalent |
IXKP30N60C5
|
Littelfuse |
| Functional Equivalent |
SIHG30N60AEL-GE3
|
Vishay |
| Functional Equivalent |
SIHG30N60E-E3
|
Vishay |
| Functional Equivalent |
SIHG30N60E-GE3
|
Vishay |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic